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APT10M11JVR - POWER MOS V 100V 144A 0.011 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10M11JVR_566269.PDF Datasheet


 Full text search : POWER MOS V 100V 144A 0.011 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.


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APT10M11LV APT10M11LVR POWER MOS V 100V 100A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
ADPOW[Advanced Power Technology]
APT20M11JVR Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
Microsemi, Corp.
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APT20M11JVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
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Microsemi, Corp.
APT10M25BVFR APT10M25 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
ADPOW[Advanced Power Technology]
MTY100N10E ON2707 Y100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
RJK1028DNS RJK1028DNS-00-J5 100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
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Renesas Electronics Corporation
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From old datasheet system
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
GFP60N03 60 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
GENERAL SEMICONDUCTOR INC
 
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